Magnetoresistance of Ga<sub>1-<i>x</i></sub>Mn<sub><i>x</i></sub>As Epitaxial Layers Doped by Be
Sh. U. YuldashevQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaHyunsik ImQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaVadim Sh. YalishevQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaChang Soo ParkQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaTae Won KangQuantum Functional Semiconductor Research Center, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, KoreaSang‐Hoon LeeDepartment of Physics, Korea University, Seoul 136-701, KoreaYuji C. SasakiDepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USAXin LiuDepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USAJ. K. FurdynaDepartment of Physics, University of Notre Dame, Notre Dame, Indiana 46556, USA
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Magnetoresistance (MR) measurements were performed on Ga1-xMnxAs (x=0.03) additionally doped with Be. At low temperatures and in low magnetic fields, a positive MR signal was observed for measurements in the transverse (B⊥I) geometry. However, at high temperatures, the MR becomes negative for all fields and all field orientations. The value of the negative MR has a maximum near the Curie temperature, and its magnitude depends strongly on the concentration of free holes. The observed MR behavior can be described by the magnetoimpurity scattering model in both the paramagnetic and the ferromagnetic temperature regions. Quantitative analysis of the Ga1-xMnxAs MR data yields the value of the p–d exchange energy as |N0β|≈1.6 eV.
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