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Effect of high-dose low-energy reactive-ion implantation on cold cathode properties

Flyura DjurabekovaInstitute of Applied Physics, Uzbek National University, Vuzgorodok, Tashkent 700095, UzbekistanБ. Е. УмирзаковTashkent State Technical University, Universitetskaya, 2, Tashkent, 700095, UzbekistanF. F. UmarovInstitute of Applied Physics, Uzbek National University, Vuzgorodok, Tashkent 700095, UzbekistanY. MiyagawaNational Institute of Advanced Industrial Science and Technology, 2266-98, Shimo-Shidami, Moriyama-ku, Nagoya, 463-8560 Japan

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atomsjournal2003en

ABI

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Mavzular

Ion-surface interactions and analysis Integrated Circuits and Semiconductor Failure Analysis Metal and Thin Film Mechanics

Identifikatorlar

DOI: 10.1016/s0168-583x(03)00725-0

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