Minority carrier lifetimes in polycrystalline silicon treated with liquid metals

The effect of treatment at 800°C in various liquid metal solvents (Sn, Bi, Pb) on the minority carrier lifetime τ in polycrystalline silicon has been studied. The results of dc photoconductivity measurements show evidence of the external gettering effect, the best gettering being observed when tin was used as the solvent. A 2-h treatment leads to a twofold increase in the τ value. The experimental data indicate that the external gettering effect can be used in practice.

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