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Ish: Characteristics of 6H-SiC Bipolar JTE Diodes Realized by Sublimation Epitaxy and Al Implantation

1. Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy

   N.S. Savkina, A. А. Lebedev, D. V. Davydov +13

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   ABIABI:AkademIndex/openalex/2026.other.396897

2. Sarlavhasiz

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   ABIABI:AkademIndex/openalex/2026.other.396896