Ushbu ish iqtibos qilgan ishlar

10 ta ish

Ish: Electrical Study of Fast Neutron Irradiated Devices Based on 4H-SiC CVD Epitaxial Layers

1. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

   T. Dalibor, Gerhard Pensl, H. Matsunami +4

   Maqola19975 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.155792

2. High-dose Al-implanted 4H-SiC p+-n-n+ junctions

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   Maqola20004 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.534891

3. Effect of irradiation with fast neutrons on electrical characteristics of devices based on CVD 4H-SiC epitaxial layers

   E. V. Kalinina, G. Kholuyanov, D. V. Davydov +5

   Maqola20033 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.382031

4. Defects in neutron irradiated SiC

   V. Nagesh, J. W. Farmer, R. F. Davis +1

   Maqola19872 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.526565

5. Structural, electrical, and optical properties of low-doped 4H–SiC chemical vapor deposited epitaxial layers

   E. V. Kalinina, G. Kholujanov, A. S. Zubrilov +13

   Maqola20012 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.534895

6. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.534892

7. Sarlavhasiz

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   ABIABI:AkademIndex/openalex/2026.other.534893

8. Sarlavhasiz

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   ABIABI:AkademIndex/openalex/2026.other.534894

9. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.534896

10. Sarlavhasiz

    Boshqa1 iqtibos

    ABIABI:AkademIndex/openalex/2026.other.534897