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Ish: Electroluminescence of p-3C-SiC/n-6H-SiC Heterodiodes, Grown by Sublimation Epitaxy in Vacuum
Low-doped 6H-SiC n-type epilayers grown by sublimation epitaxy
N.S. Savkina, A. А. Lebedev, D. V. Davydov +13
Maqola20004 iqtibosABIMBE growth and properties of SiC multi-quantum well structures
A. Fissel, Ute Kaiser, Bernd Schröter +2
Maqola20013 iqtibosABIObservation of 4H–SiC to 3C–SiC polytypic transformation during oxidation
Robert S. Okojie, Ming Xhang, Pirouz Pirouz +3
Maqola20012 iqtibosABI