Maqola

Effect of laser processing on gallium arsenide device structures

S.E. BekbergenovBerdakh Karakalpak State University, Nukus, Uzbekistan

2004en

ABI

Annotatsiya

Some aspects of laser processing application in the formation of gallium arsenide surface-barrier structures and ohmic contacts for them are considered on the basis of analysis of experimental results known from literature, as well as those obtained by the author.

Hali tarjima qilinmagan

Mavzular

Semiconductor Quantum Structures and Devices Semiconductor Lasers and Optical Devices Photonic and Optical Devices

Identifikatorlar

DOI: 10.1109/crmico.2004.183329

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