Maqola

Electron exchange between neutral and ionized germanium centers in PbSe

E. I. TerukovIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, RussiaÉ. S. KhuzhakulovTashkent Regional State Pedagogical Institute, Angren, 702500, Uzbekistan

Semiconductorsjournal2005en

ABI

Annotatsiya

It is shown that the charge state of the antisite 73Ge defect formed in the anion sublattice of PbSe as a result of radioactive transformation of 73As does not depend on the Fermi level position. In contrast, the 73Ge center in the cation sublattice of PbSe is an electrically active substitutional impurity: the electron energy spectrum corresponds to the neutral state of the donor center (Ge2+) in the n-type samples and to the doubly ionized states of this center (Ge4+) in the p-type samples. For partially compensated samples, fast electron exchange between the neutral and ionized donor centers is observed.

Mavzular

Semiconductor materials and interfaces Chalcogenide Semiconductor Thin Films Solid-state spectroscopy and crystallography

Identifikatorlar

DOI: 10.1134/1.2140306

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