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2 ta ish

Ish: Effect of ultrasonic treatment on the generation characteristics of irradiated silicon-silicon-dioxide interface

  1. The physics of semiconductor devices

    H. L. Grubin

    Maqola197918 iqtibos
    ABI
  2. The Pulsed MIS Capacitor. A Critical Review

    Jaehyeon Kang, D.K. Schroder

    Sharh maqola19857 iqtibos
    ABI