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Impact of electron-escaping effect on the γ-ray sensitivity of PIN detector

Zhen WangInstitute of Nuclear Physics and Chemistry,CAREP,Mianyang of Sichuan Prov
ABI

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The impact of electron-escaping effect on the γ-ray sensitivity of PIN detector and corresponding compensation effect of aluminum and polyethylene are simulated and experimentally studied.The simulation is conducted by using MCNP code to calculate the pulse-height energy deposition of γ-rays in the sensitive layer of PIN detector,the result of which is then analyzed to give a proposed sensitivity.Experimental study is conducted by using ~(60)Co gamma-ray source to calibrate the sensitivity under various compensating conditions.The simulation and calibration results indicate that electron-escaping effect has significant impact on the sensitivity and can be partially compensated by setting aluminum or polyethylene sheet in front of the detector.

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