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Ish: Dependence of the divacancy concentration on the germanium content in Si1 − x Ge x alloys under irradiation by fast and slow neutrons

1. Dependence of the divacancy concentration on the germanium content in p-Si1 − x Ge x (0 < x < 0.10) alloys irradiated with 5-MeV electrons

   N. A. Matchanov

   MaqolaSilicon and Solar Cell TechnologiesTechnical Physics Letters20070 iqtibos

   ABIABI:AkademIndex/openalex/2007.article.000331