Possibility of doping and using ZnSe, CdS, and GaP layers as down converters of Si and CuInSe2 solar cells

The possibility and reasonability of developing down converters of Si and CuInSe2 solar cells based on Ge2P- and GaSb-doped GaP, ZnTe, and CdS is discussed. The case is considered when a down converter is a part of a solar cell’s p–n heterojunction, and the preparation conditions for the GaP(Ge2GaSb) layer of the Si substrate are specified.

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