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<title>About mechanisms of anomalous photovoltage effect in CdTe films</title>

G. A. NabievFerghana Polytechnical Institute (Uzbekistan)

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIEjournal2007en

ABI

Annotatsiya

In the work a method of discrimination of exposure skewness contribution and differences of p-n and n-p junctions of p-n-p structure to the anomalous photovoltage effect (APV-effect) in the films of cadmium telluride is suggested.

Mavzular

Advanced Semiconductor Detectors and Materials Engineering Diagnostics and Reliability Thermography and Photoacoustic Techniques

Identifikatorlar

DOI: 10.1117/12.742553

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Koʻrsatkichlar — AkademScholar · Tez orada

&lt;title&gt;About mechanisms of anomalous photovoltage effect in CdTe films&lt;/title&gt;

Annotatsiya

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Iqtiboslar va manbalar

<title>About mechanisms of anomalous photovoltage effect in CdTe films</title>