Influence of gamma radiation on the spectral characteristics of heterophotoconverters with microrelieved surface on the heteroboundary
M. MirzabaevPhysicotechnical Institute NPO Fizika-Solntse, Academy of Sciences of Uzbekistan Republic, UzbekistanK. RasulovPhysicotechnical Institute NPO Fizika-Solntse, Academy of Sciences of Uzbekistan Republic, UzbekistanA. A. AbakumovPhysicotechnical Institute NPO Fizika-Solntse, Academy of Sciences of Uzbekistan Republic, Uzbekistan
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The properties are studied of the microrelieved heterophotoconverters (MHPCs) that are based on the GaAs-AlGaAs system with a microrelieved surface on the heteroboundary that is obtained by the capillary liquid-phase epitaxy method. It is shown that these structures have high rectification coefficient and high current sensitivity in the shortwave region of the spectrum. We examine the influence of γ rays of dosage 2 × 107 R on the dark VACs and the spectral characteristics of these MHPCs. One of the reasons for the relatively low radiation resistance of the MHPC in comparison with the HPC with the smooth surface may be the defects of the active region of the heterostructures that form in the anisotropic etching of nGaAs.
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