Design of functional nodes for telecommunication devices based on Photo- Voltaic and Injection-Voltaic Effects.
Kh. K. AripovTashkent University of Information Technologies, Tashkent, Uzbekistan, Tashkent, UzbekistanKh. Kh. BustanovTashkent University of Information Technologies, Tashkent, Uzbekistan, Tashkent, UzbekistanE. V. Ob’edkovTashkent University of Information Technologies, Tashkent, Uzbekistan, Tashkent, UzbekistanF.R. NasirkhodjaevTashkent University of Information Technologies, Tashkent, Uzbekistan, Tashkent, Uzbekistan
2007en
ABI
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The work is devoted to synthesis optoelectronic circuits of receiving nodes for telecommunication devices with amplification featuring enhanced work stability at high values of collector-emitter voltage, high working currents, i.e. in a mode with high dissipation power (several times higher comparing with any known modes of operations), which enables independent optimization of value of spectral sensitivity and amplification factor.
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