Recombination in semiconductors with deep impurities
A. Yu. LeĭdermanPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Uzbekh Republic, Tashkent, UzbekistanV. G. Stel’makhAcademy of Sciences of the Uzbekh RepublicМ. Ф. СадыковPhysicotechnical Institute, NPO Fizika-Solntse, Academy of Sciences of the Uzbekh Republic, Tashkent, Uzbekistan
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The results of papers dealing with computation of the recombination processes of nonequilibrium electrons and holes in semiconductors with deep impurities are reviewed. It is shown that at high excitation levels, when many defects and defect-impurity complexes appear in the semiconductor, the number of efficiently working recombination centers becomes a function of the excitation level of the material. As a result, recombination inhibition takes place, which leads to change of the operating parameters of the devices, in particular of the photocells.
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