Ushbu ish iqtibos qilgan ishlar

8 ta ish

Ish: Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi

1. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

   T. Dalibor, Gerhard Pensl, H. Matsunami +4

   Maqola19975 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.155792

2. A High-Sensitivity System for Cathodoluminescent Studies with the Camebax Electron Probe Microanalyzer

   M. V. Zamoryanskaya, S. G. Konnikov, A. N. Zamoryanskii

   Maqola20042 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.534693

3. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.623832

4. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.623833

5. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.623834

6. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.623835

7. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.623836

8. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/openalex/2026.other.623837