Approximate evaluation of operating conditions and effectiveness of solar impurity thermovoltaic element

The effectiveness of solar impurity thermovoltaic elements based on semiconductors with forbidden gap width 0.3 eV with thin highly doped p- and n-layers with concentration ∼5 × 1019 cm−3, containing in addition a deep impurity with concentration ∼4 × 1018 cm−3 and ionization energy 0.15 eV, is shown to reach 30–40% with solar radiation intensity 0.1 W/cm2.

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