Phase-to-phase perovskite growth transformation in thin PZT films
И. П. ПронинIoffe Physicotechnical Institite, Russian Academy of Sciences, St. Petersburg, 194021, RussiaE. Yu. KaptelovIoffe Physicotechnical Institite, Russian Academy of Sciences, St. Petersburg, 194021, RussiaС. В. СенкевичHerzen State Pedagogical University of Russia, St. Petersburg, 191168, RussiaT. A. ShaplyginaIoffe Physicotechnical Institite, Russian Academy of Sciences, St. Petersburg, 194021, RussiaV. A. KlimovIoffe Physicotechnical Institite, Russian Academy of Sciences, St. Petersburg, 194021, RussiaВ. П. ПронинHerzen State Pedagogical University of Russia, St. Petersburg, 191168, Russia
ABI
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The structure and dielectric properties of thin lead zirconate titanate films grown ex situ on Pt/SiO2/Si substrates were studied. It was shown that with a crystallization temperature increase in the range of 540 to 580°C, the mechanism of perovskite phase growth changes and the ferroelectric parameters change according to this transformation.
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