Maqola

Distribution of electron density of states in allowed bands and interband absorption in amorphous semiconductors

S. ZainobidinovAndijan State University, Andijan, 710020, UzbekistanRustamjon G. IkramovNamangan State University, Namangan, 716019, UzbekistanRavshan ZhalalovNamangan State University, Namangan, 716019, UzbekistanMashkhura A. NuritdinovaNamangan State University, Namangan, 716019, Uzbekistan

Optics and Spectroscopyjournal2011en

ABI

Annotatsiya

Different types of electronic transitions and the corresponding spectral characteristics of the absorption coefficient of amorphous semiconductors, where the energy of absorbed photons exceeds the mobility band gap, have been investigated. Partial spectral characteristics of the absorption coefficient and, correspondingly, the distributions of the electron density of the states involved in these optical transitions are obtained for the case where the electron densities of states in the allowed bands and the tails of these bands change with energy according to the power and exponential laws, respectively. The conditions for the occurrence of a peak in the spectral characteristic of the interband absorption coefficient are determined.

Mavzular

Glass properties and applications Surface Roughness and Optical Measurements Phase-change materials and chalcogenides

Identifikatorlar

DOI: 10.1134/s0030400x11030271

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