Ushbu ishga iqtibos qilgan ishlar

3 ta ish

Ish: On new two-dimensional structures produced on the Si (111) and Si (100) surface upon molecular-beam epitaxy of cobalt and silicon

1. Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

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2. Research of Surface and Near – Surface Region Diffusion Doped Silicon by Manganese

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3. Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

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