Maqola

The composition dependence of the effective thickness of the base layer in Al x Ga1 − x P/GaP heterophotoconverters

M. A. AbdukadyrovTashkent University of Information Technologies, Tashkent, 100084, UzbekistanI. O. DzhumaniyazovTashkent University of Information Technologies, Tashkent, 100084, UzbekistanР. А. МуминовPhysicotechnical Institute NPO Fizika-Solntse, Uzbek Academy of Sciences, Tashkent, 700084, Uzbekistan

Applied Solar Energyjournal2011en

ABI

Annotatsiya

The dependence between the composition of Al x Ga1 − x P heterophotoconverters and the effective thickness of their base layers was established. An empirical formula to estimate the effective thickness of a base layer as a function of the composition of solid-state solution (0 ≤ x ≤ 0.8) was proposed.

Mavzular

Semiconductor Quantum Structures and Devices Photonic and Optical Devices Photonic Crystals and Applications

Identifikatorlar

DOI: 10.3103/s0003701x11040025

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