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Epitaxial growth of Ge nanoislands on Si/Ge heterostructure by ion-assisted MBE method

Х. Б. АшуровArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, UzbekistanFlyura DjurabekovaArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, UzbekistanС. Е. МаксимовArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, UzbekistanA. I. NikiforovInstitute of Semiconductor Physics, Siberian Department of the Russian Academy of Sciences, Novosibirsk, RussiaSadulla Sh. TadjimuratovArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, UzbekistanБ. Л. ОксенгендлерArivov Institute of Electronics, Uzbek Academy of Science, Tashkent, Uzbekistan

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atomsjournal2011en

ABI

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Annotatsiya mavjud emas.

Mavzular

Ion-surface interactions and analysis Silicon Nanostructures and Photoluminescence Semiconductor Quantum Structures and Devices

Identifikatorlar

DOI: 10.1016/j.nimb.2011.08.059

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