Annealing and photobleaching effects on the absorption spectra of gamma-irradiated BaFI crystals
И. НуритдиновInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, Ulugbek, Tashkent, 100214, UzbekistanB. T. AtashovBerdakh State University, ul. Akademika Abdirova 1, Nukus, 742000, Karakalpakstan, UzbekistanA. B. UteniyazovaAjiniyaz Pedagogical Institute, ul. Dosnazarova 104, Nukus, 230100, Karakalpakstan, Uzbekistan
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We have studied processes induced in gamma-irradiated BaFI crystals by illumination and thermal annealing and identified defect centers responsible for the observed absorption bands. We assign the 205-nm absorption band to α(F−) centers, the 230-nm band to α(I−) centers, the 270-nm band to Fi 0 centers, the 370-nm band to I i 0 centers, the bands around 480 nm to F(F−) centers, and the 610-nm band to F(I−) centers. The proposed assignment accounts well for the radiation-induced processes identified in the crystals.
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