Simulation of fractal cluster growth on a substrate under ion bombardment
Х. Б. АшуровArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, UzbekistanС. Е. МаксимовArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, UzbekistanБ. Л. ОксенгендлерArifov Institute of Electronics, Uzbek Academy of Sciences, Tashkent, UzbekistanО. Е. СидоренкоVoronezh State University, Voronezh, RussiaM.B. GusevaMoscow State University, Moscow, Russia
ABI
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Ion-stimulated growth of a fractal cluster on the substrate is simulated in regimes that are intermediate between diffusion- and reaction-limited aggregations. It is shown that the fractal dimension of a growing cluster and the type of formed epitaxial structure are due to the sequence of ion-stimulated processes with different fractal dimensions. The algorithm for revealing the ion stimulation mechanism of processes based on fractal laws is proposed.
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