Study of the Au/SiO2 + Co(65 at %)/GaAs heterostructure interfaces by the polarized neutron reflectometry method
Victor UkleevSt. Petersburg Academic Physicotechnical University, Russian Academy of Science, St. Petersburg, RussiaN. A. GrigorievaSt. Petersburg State University, St. Petersburg, RussiaA. VorobievEuropean Center of Synchrotron Radiation, Grenoble, FranceS. V. GrigorievSt. Petersburg Institute of Nuclear Physics, St. Petersburg, RussiaL. V. LutsevIoffe Physicotechnical Institute, Russian Academy of Science, St. Petersburg, RussiaE. A. DyadkinaSt. Petersburg Institute of Nuclear Physics, St. Petersburg, RussiaD. LottGKSS, Geesthacht, GermanyА. И. СтогнийInstitute of Solid State and Semiconductor Physics, Minsk, BelarusN. N. NovitskyInstitute of Solid State and Semiconductor Physics, Minsk, Belarus
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Using the polarized neutron reflectometry method, we studied Au/SiO2 + Co(60 at %)/GaAs granular films, which display a giant injection magnetoresistance effect in a narrow temperature range close to T = 300 K. We revealed the existence of a layer having particular magnetic properties at the boundary of a film with a semiconductor GaAs substrate. Experiments carried out at temperatures T = 300 K and T = 100 K showed an insignificant difference in the magnetic profile of the heterostructure.
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