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49 ta ish

Ish: Positron annihilation on defects in silicon irradiated with 15 MeV protons

  1. Sarlavhasiz

    Boshqa1117 iqtibos
    ABI

  2. Impurities and point defects in semiconductors

    V. V. Emtsev, T.V. Mashovets

    Maqola19817 iqtibos
    ABI

  3. Positron Annihilation in Semiconductors

    R. Krause‐Rehberg, Hartmut S. Leipner

    Kitob19996 iqtibos
    ABI

  4. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy

    G. D. Watkins, J. W. Corbett

    Maqola19656 iqtibos
    ABI

  5. Condensed matter : new research

    Mrinmay Das

    Kitob20075 iqtibos
    ABI

  6. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>E</mml:mi></mml:math>Center

    G. D. Watkins, J. W. Corbett

    Maqola19645 iqtibos
    ABI

  7. Positron dynamics in solids

    Werner Brandt

    Maqola19745 iqtibos
    ABI

  8. Positron studies of condensed matter

    R N West

    Maqola19734 iqtibos
    ABI

  9. Modification of semiconductors with proton beams. A review

    В. В. Козловский, В. А. Козлов, V. N. Lomasov

    Sharh maqola20003 iqtibos
    ABI

  10. Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal

    N.Yu. Arutyunov, V. V. Emtsev

    Maqola20053 iqtibos
    ABI

  11. Positron Annihilation Rate and Broad Component of 1D-ACAR in Cz-Si and Fz-Si

    N.Yu. Arutyunov

    Maqola19973 iqtibos
    ABI

  12. Atomic Environment of Positrons Annihilating in Different Parts of Cz-Si Single Crystal

    N.Yu. Arutyunov, R. Krause‐Rehberg

    Maqola20033 iqtibos
    ABI

  13. Momentum distributions of electron-positron pairs annihilating at vacancy clusters in Si

    Mikko Hakala, M. J. Puska, R. M. Nieminen

    Maqola19983 iqtibos
    ABI

  14. Identification of defect properties by positron annihilation in Te-doped GaAs after Cu in-diffusion

    Mohamed Elsayed, R. Krause‐Rehberg, W. Anwand +2

    Maqola20113 iqtibos
    ABI

  15. Positron Trapping by Oxygen-Related Defects in Silicon and Anisotropy of 1D-ACAR Spectra

    N.Yu. Arutyunov

    Maqola19992 iqtibos
    ABI

  16. Positron detrapping from defects: A thermodynamic approach

    M. Manninen, R. M. Nieminen

    Maqola19812 iqtibos
    ABI

  17. Defects in Irradiated Silicon. II. Infrared Absorption of the Si-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>Center

    J. W. Corbett, G. D. Watkins, R. M. Chrenko +1

    Maqola19612 iqtibos
    ABI

  18. Defects in Irradiated Silicon. I. Electron Spin Resonance of the Si-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>A</mml:mi></mml:math>Center

    G. D. Watkins, J. W. Corbett

    Maqola19612 iqtibos
    ABI

  19. Positron Sudies of Thermal-Induced Defects in Silicon

    N.Yu. Arutyunov, V.Yu. Traschakov

    Maqola19892 iqtibos
    ABI

  20. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  21. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  22. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  23. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  24. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  25. Sarlavhasiz

    Boshqa1 iqtibos
    ABI