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9 ta ish

Ish: Temperature Dependence of the Band-Edge Injection Electroluminescence of 4H-SiC pn Structure

  1. Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe

    M. E. Levinshteĭn, Sergey Rumyantsev, M. S. Shur

    Kitob20012 iqtibos
    ABI

  2. Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanisms

    M. Ikeda, Tomokatsu Hayakawa, Shin-ichi Yamagiwa +2

    Maqola19792 iqtibos
    ABI

  3. High-Quality 3C-SiC pn-Structures Created by Sublimation Epitaxy on a 6H-SiC Substrate

    Anatoly M. Strel’chuk, A. А. Lebedev, Alexey N. Kuznetsov +2

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20042 iqtibos
    ABI

  4. Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn Structures

    Anatoly M. Strel’chuk, Evgenia V. Kalinina, Andrey O. Konstantinov +1

    MaqolaSilicon and Solar Cell TechnologiesMaterials science forum20052 iqtibos
    ABI

  5. Temperature coefficient of the energy gap of β-silicon carbide

    Richard Dalven

    Maqola19652 iqtibos
    ABI

  6. Free exciton luminescence in 3C, 4H, 6H, and 15R SiC

    M. Ikeda, H. Matsunami

    Maqola19802 iqtibos
    ABI

  7. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  8. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  9. Temperature Dependence of the Band-Edge Injection Electroluminescence of 3C-SiC pn Structure

    Anatoly M. Strel’chuk, A. А. Lebedev, N.S. Savkina +1

    MaqolaSilicon Carbide Semiconductor TechnologiesMaterials science forum20071 iqtibos
    ABI