Application of the surface ionization for the detection of secondary particles in the secondary-ion mass spectrometry (SIMS)
С. Н. МорозовInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, ul. Durmon iuli 33, Tashkent, 100125, UzbekistanУ. Х. РасулевInstitute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, ul. Durmon iuli 33, Tashkent, 100125, Uzbekistan
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Annotatsiya
A method for postionization in the course of ion sputtering that is based on surface ionization of the sputtered particles is developed. The estimations show that the method allows a significant increase in the sensitivity of the secondary-ion mass spectrometry for several elements. Nonadditive increase in the sputtering coefficient of indium is experimentally studied using the surface-ionization method of postionization when the number of atoms in projectile clusters Bi + (m = 1–7) increases at energies 2–10 keV. Such a scheme for the detection of neutral particles can be used in alternative methods for the surface analysis, in particular, laser evaporation of surface and electron-stimulated desorption.
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