Effect of substrate crystal on mechanical stresses in heteroepitaxial photo-conversion Ga x In1 − x P/GaP structures
M. A. AbdukadyrovTashkent University of Information Technologies, Tashkent, UzbekistanA. S. GanievTashkent University of Information Technologies, Tashkent, UzbekistanI. O. DzhumaniyazovTashkent University of Information Technologies, Tashkent, UzbekistanР. А. МуминовTashkent University of Information Technologies, Tashkent, Uzbekistan
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The occurrence of mechanical stresses in heteroepitaxial photo-conversion Ga x In1 − x P structures (0.6 ≤ x ≤ 0.8) depending on their composition and the width of the substrate GaP monocrystal is studied. At given temperatures of layer growth and solid solution compositions, mechanical stresses in a heterostructure are shown to be appreciably weakened due to an increase in GaP substrate bending as the substrate thickness is decreased from 400 to 100 μm.
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