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X-ray fluorescence analysis of Ge1–x Se x , As1–x Se x , and Ge1–x–y As y Se x glasses using electronic excitation

Е. И. ТеруковIoffe Physical–Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, RussiaП. П. СерегинAlexander Herzen State Pedagogical University of Russia, ul. Moika 48, St. Petersburg, 191186, RussiaА. В. МарченкоAlexander Herzen State Pedagogical University of Russia, ul. Moika 48, St. Petersburg, 191186, RussiaD. V. ZhilinaIoffe Physical–Technical Institute, Russian Academy of Sciences, ul. Politekhnicheskaya 26, St. Petersburg, 194021, RussiaК. У. БобохужаевMirzo Ulug’bek National University of Uzbekistan, ul. Universitetskaya 174, Tashkent, 100174, Uzbekistan
Semiconductorsjournal2015en
ABI

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X-ray fluorescence analysis with fluorescence excitation by an electron beam with an energy of 30 kV is applied to determine the germanium, arsenic, and selenium contents in Ge1–x Se x , As1–x Se x , and Ge1–x–y As y Se x glassy alloys. Using calibration dependences, the quantitative composition of the glasses is determined with an accuracy of ±0.0002 for parameters x and y in a surface layer ~0.1 µm deep.

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