Impact of concentrated solar radiation on a GaAs/AlGaAs Heterojunction Photo Converter with a limited absorption layer
M. A. AbdukadyrovTashkent University of Information Technologies, Tashkent, UzbekistanA. S. GanievTashkent University of Information Technologies, Tashkent, UzbekistanР. А. МуминовPhysics and Technology Institute NPO Physics–Sun Academy of Science, Republic of Uzbekistan, Tashkent, Uzbekistan
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The photoelectric and thermal properties of a GaAs/AlGaAs Heterojunction Photo Converter (HPC) with a GaP substrate within the range of the solar radiation concentrations K c = 1–100 in a passive heat removal mode were studied. It was revealed that the limitation of the cumulative thickness of GaAs up to 5mkm in the heterojunction structure and wide zone GaP with comparatively high thermal conductivity between the p–n transition and heat removal contributes to the almost twice the reduction of the temperature growth of the p–n transition compared to a traditional GaAs/AlGaAs heterojunction photo converter.
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