Photoelectrical properties of n/6H–p +/3C–SiC and n/6H–SiC–p/Cdiamond heterostructures obtained via CVD
Timur SalievPhysics–Sun Physicotechnical Institute, Uzbekistan Academy of Sciences, Tashkent, UzbekistanS. L. LutpullaevPhysics–Sun Physicotechnical Institute, Uzbekistan Academy of Sciences, Tashkent, UzbekistanA. KutlimratovPhysics–Sun Physicotechnical Institute, Uzbekistan Academy of Sciences, Tashkent, UzbekistanN. T. MutalovPhysics–Sun Physicotechnical Institute, Uzbekistan Academy of Sciences, Tashkent, Uzbekistan
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The work considers UV photodetectors (PDs) operating in the UV solar radiation spectral range, which exert a strong influence on the vital functions of living organisms of the Earth, including humans. Two different UV PDs developed on the basis of 6H–SiC: n/6H–SiC–p+/3C–SiC and n/6H–SiC–p/Cdiamond polytype heterostructures are considered. We show their band energy diagrams and photosensitivity spectra in the photogeneration and photodiode measuring modes.
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