Origin of the electrical activity of iron atoms in vitreous arsenic selenide
А. В. МарченкоHerzen Russian State Pedagogical University, nab. reki Moyki 48, St. Petersburg, 191186, RussiaT. Yu. RabchanovaHerzen Russian State Pedagogical University, nab. reki Moyki 48, St. Petersburg, 191186, RussiaП. П. СерегинHerzen Russian State Pedagogical University, nab. reki Moyki 48, St. Petersburg, 191186, RussiaА. Б. ЖаркойHerzen Russian State Pedagogical University, nab. reki Moyki 48, St. Petersburg, 191186, RussiaК. У. БобохужаевUlugbek National University of Uzbekistan, Vuzgorodok 4, Alamazarskii Massiv, Tashkent, 100174, Uzbekistan
ABI
Annotatsiya
Iron atoms in vitreous arsenic selenide films form single electron donor centers, while the Fermi level shifts from the middle of the band gap to the bottom of the conduction band with an increase in the iron concentration due to the filling of single electron states of the acceptor type located below the Fermi level.
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