Iron ions distribution profile obtained by irradiating the silicon single crystal
A. A. ShemukhinSkobeltsyn Institute of Nuclear Physics, 119991, Moscow, RussiaA. V. KozhemiakoLomonosov Moscow State University, Department of Physics, 119991, Moscow, RussiaYu. V. BalakshinSkobeltsyn Institute of Nuclear Physics, 119991, Moscow, RussiaV. S. ChernyshLomonosov Moscow State University, Department of Physics, 119991, Moscow, Russia
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Iron ions with energies of 90 and 250 keV and the irradiation dose of 1016 ions/cm2 and xenon ions with energies of 100 keV and dose 7,7×1014 cm-2, 200 keV and dose 2,6 × 1014 cm-2 were implanted in the single crystal of silicon (110). The distribution profiles of implanted impurity, as well as the distribution profiles of the radiation defects in the crystal lattice, were studied by the Rutherford backscattering method in combination with channeling. The experimental results were compared with the results of simulations of binary collisions of the Monte Carlo method in the TRIM program. It is shown that the difference between the experimental data and the calculation program TRIM is more than 35% in all cases.
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