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Influence of composition and heat treatment in CdCl2 solution on intrinsic point defects in CdTe films

B. A. ErgashevPhysical-Technical Institute, Physics-Sun Scientific Production Association, Uzbekistan Academy of Sciences, Tashkent, 100084, UzbekistanT.M. RazykovPhysical-Technical Institute, Physics-Sun Scientific Production Association, Uzbekistan Academy of Sciences, Tashkent, 100084, Uzbekistan

Applied Solar Energyjournal2017en

ABI

Annotatsiya

CdTe films of different compositions were grown by the chemical molecular-beam deposition method. The activation energy and the nature of deep levels in relation with the composition of films based on the temperature dependence of electroconductivity are defined, and the influence on these levels of heat treatment process in CdCl2 solution has been studied. Deep levels with the following activation energies are defined: Ev +0.31 eV; Ev + 0.42 ± 0.03 eV; Ec–0.44 ± 0.01 eV; Ec–0.28 eV; Ev + 0.24 ± 0.01 eV.

Mavzular

Chalcogenide Semiconductor Thin Films Advanced Semiconductor Detectors and Materials Quantum Dots Synthesis And Properties

Identifikatorlar

DOI: 10.3103/s0003701x17040065

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