Deep Level Transient Spectroscopy of Silicon, Doped by Zirconium

By means of methods transient capacitance spectroscopy of deep levels and photo-capacitance studied the formation of defects in silicon, doped Zirconium. Discovered that diffusive introduction of zirconium into the silicon leads to the formation of three deep levels with fixed ionization energies of Ec-0.22 eV, Ec-0.42 eV and Ev+0.30 eV, and dominate the last two levels. It is established that the efficiency of the formation of deep centers associated with the atoms of zirconium increases with temperature diffusion and the cooling rate after diffusion.

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