Ushbu ishga iqtibos qilgan ishlar

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Ish: The relative current change, concentration, and carrier mobility in silicon samples doped nickel and at pulse hydrostatic pressure

1. Development of technology for creating high-voltage p0–n0 junctions based on GaAs

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   MaqolaSemiconductor Lasers and Optical DevicesBulletin of the Karaganda University Physics Series20231 iqtibos

   ABIABI:AkademIndex/openalex/2023.article.003365