Photosensors Based on Neutron Doped Silicon
M. Yu. TashmetovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Tashkent, UzbekistanSh. A. MakhmudovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Tashkent, UzbekistanA. A. SulaymonovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Tashkent, UzbekistanA. K. RafikovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Tashkent, UzbekistanB. Zh. AbdurayimovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, 702132, Tashkent, Uzbekistan
ABI
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The problem of preparing a compensated material is solved by the radiation technology method (by irradiating the silicon single-crystal with fast neutrons), which makes it possible to intentionally change the photoelectric parameters of silicon. The changes in the photoelectric parameters of the compensated samples are monitored by measuring the Rd/Rl ratio, and the possibility of creating photo and thermal sensors with identical characteristics, operating within the temperature range of 30 to 100°C, is shown.
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