GAS SENSITIVITY SPEED OF AMMONIA SEMICONDUCTOR SENSORS BASED ON METAL-OXIDE FILMS SiO2/TiO2-Fe2O3
И Э АбдурахмановOtabek Artikovich KuchkarovDepartment of Analytical Chemistry, Samarkand State University, Uzbekistan, 140104Ergashboy AbdurakhmanovDepartment of Analytical Chemistry, Samarkand State University, Uzbekistan, 140104
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In the present article a sensor was investigated as a provider of the rapid determination of ammonia in a wide range of its concentrations in atmospheric air and process gases. It was found that the gas sensitivity value of the ammonia sensor depends on the amount of catalyst in the gas-sensitive material (GSM). An increase in the concentration of iron compounds in GSM from 5 to 10% leads to increase of the fast of sensors by 1.2-1.4 times. At an annealing temperature of 550 C, the response time of the sensor reaches a stable value (14 s.) above which does not decrease the value of this indicator of the sensor.
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