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Study Of The Distribution Profile Of Mechanisms Gland With Implantation Method

Bakhrom Egamberdievich EgamberdievTashkent State Technical University, Tashkent, UzbekistanA. S. MallaevKarshi State University, Karshi, UzbekistanShohruh Aamin o’g’li SayfulloyevScientific Research Institute of Semiconductor Physics and Microelectronics, National University of Uzbekistan, Tashkent, Uzbekistan

JournalNX - A Multidisciplinary Peer Reviewed Journaljournal2021en

ABI

Annotatsiya

In this article on ions with the (110) orientation were implanted into the silicon single crystal. Using the RBS (Rutherford backscattering) method, in combination with channeling, the distribution profiles of the embedded impurity were studied; in addition, the distribution profiles of radiation defects located in the crystal lattice were studied. The simulation results in the TRIM (to’liq nomi kerak) program are compared with the experimental results. It is shown that, at an energy of 4.6 keV / nucleon, a coincidence of the average projective ranges is observed, and when the energy falls to 1.6 keV / nucleon, a difference of 35% is observed. The dose dependence is not taken into account correctly at an energy of 1.6–4.6 keV / nucleon.

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Mavzular

Crystallography and Radiation Phenomena Nuclear materials and radiation effects Graphite, nuclear technology, radiation studies

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