Optical and Recombination Parameters of CdS1−xTex Thin Films Obtained by the CMBD Method
T.M. RazykovLaboratory of Photovoltaics, Physical-Technical Institute, Uzbekistan Academy of Sciences, Tashkent 100084, UzbekistanA. PatrynFaculty of Electronics and Computer Science, Koszalin University of Technology, 75-453 Koszalin, PolandM. MalińskiFaculty of Electronics and Computer Science, Koszalin University of Technology, 75-453 Koszalin, PolandLeszek BychtoFaculty of Electronics and Computer Science, Koszalin University of Technology, 75-453 Koszalin, PolandB. A. ErgashevLaboratory of Photovoltaics, Physical-Technical Institute, Uzbekistan Academy of Sciences, Tashkent 100084, UzbekistanK.M. KouchkarovLaboratory of Photovoltaics, Physical-Technical Institute, Uzbekistan Academy of Sciences, Tashkent 100084, UzbekistanAkbarjon ShukurovLaboratory of Photovoltaics, Physical-Technical Institute, Uzbekistan Academy of Sciences, Tashkent 100084, UzbekistanM. A. MakhmudovLaboratory of Photovoltaics, Physical-Technical Institute, Uzbekistan Academy of Sciences, Tashkent 100084, UzbekistanDiyorbek IsaqovLaboratory of Photovoltaics, Physical-Technical Institute, Uzbekistan Academy of Sciences, Tashkent 100084, Uzbekistan
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This paper presents the results of the photoacoustic, SEM, and surface photovoltage experiments performed on the series of CdS1−xTex thin films. These CdS1−xTex (0 ≤ x ≤ 1) thin films were obtained on the glass substrate by the chemical molecular beam deposition (CMBD) method. The polycrystalline character of these films was revealed by SEM pictures. From the experimental optical characteristics, the optical absorption coefficient spectra of the samples and values of their energy gaps vs. their composition were determined. From the surface photovoltage characteristics, the diffusion lengths of the carriers were also determined.
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