Parameters Defining the Interband Absorption Coefficient in Amorphous Semiconductors: A Recent Study
Rustam IkramovNamangan Institute Engineering and Technology, Namangan city, Kosonsoy str., 7, UzbekistanMashhura Anvarbekovna NuriddinovaNamangan Institute Engineering and Technology, Namangan city, Kosonsoy str., 7, UzbekistanKhurshid Adhamjon Ugli MuminovssNamangan Institute Engineering and Technology, Namangan city, Kosonsoy str., 7, Uzbekistan
ABI
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The theoretically derived formulas for the interband absorption spectra in amorphous semiconductors are investigated. It is demonstrated that utilising experimentally obtained interband absorption spectra, the proportionality coefficient and the energy width of the mobility gap of these spectra can be derived. It was discovered that as the amount of selenium in an amorphous selenium-sulfur combination decreases, the mobility gap's energy width widens.
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