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33 ta ish

Ish: Simulation of temperature dependence of oscillations of longitudinal magnetoresistance in nanoelectronic semiconductor materials

  1. Experimental Determination of the Subband Electron Effective Mass in InGaAs/InAlAs HEMT-structures by the Shubnikov – de Haas Effect at Two Temperatures

    N. A. Yuzeeva, Г. Б. Галиев, E. A. Klimov +3

    Maqola20155 iqtibos
    ABI

  2. Sarlavhasiz

    Boshqa5 iqtibos
    ABI

  3. Quantum Hall effect and Shubnikov–de Haas oscillations in a high-mobility <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>p</mml:mi></mml:math>-type PbTe quantum well

    F. S. Pena, S. Wiedmann, E. Abramof +4

    Maqola20215 iqtibos
    ABI

  4. Strain Effects on Rashba Spin‐Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures

    Chia‐Tse Tai, Po‐Yuan Chiu, Chia-You Liu +6

    Maqola20215 iqtibos
    ABI

  5. Electrical properties of InAs irradiated with protons

    V. N. Brudnyı̆, N. G. Kolin, А. И. Потапов

    Maqola20035 iqtibos
    ABI

  6. Degeneracy and effective mass in the valence band of two-dimensional (100)-GaAs quantum well systems

    Vinicio Tarquini, Talbot Knighton, Zhe Wu +3

    Maqola20144 iqtibos
    ABI

  7. Cyclotron mass of an electron in strong magnetic fields in a wide InAs quantum well

    B. T. Abdulazizov

    MaqolaSemiconductor Quantum Structures and DevicesEurasian journal of physics and functional materials20223 iqtibos
    ABI

  8. Sarlavhasiz

    Boshqa2 iqtibos
    ABI