Non-volatile phototransistor based on two dimensional MoTe₂ nanostructures

We fabricate field-effect transistors (FETs) from low-layer molybdenum ditelluride (MoTe2) in the nanometer range and study its optoelectronic properties. In particular, we investigate the mechanisms of photocurrent generation in MoTe2 FETs using gate and bias-dependent photocurrent measurements. The results obtained show the photocurrent effects and signals generated in the MoTe2-electrode junctions, which identify the effect of amplifying the photoconductor in the off and on modes. This is different from those conventional MoTe2 FETs, which exhibited a continuous increase in photocurrent with no back gate voltage. These results play an important role in the fabrication of direction dependent field effect transistors based on MoTe2 crystals.

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