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Electrophysical Properties of a Solar Cell with Non-Traditional Contact Structures

Mardon A. AskarovKarakalpak State University named after Berdakh of the Ministry of Higher and Secondary Specialized Education of the Republic of UzbekistanErkin Z. ImamovTashkent University of Information Technologies named after Muhammad al-Khwarizmi (TUIT) of the Ministry for Development of Information Technologies and Communications of the Republic of UzbekistanRAMIZULLA MUMINOVPhysical-Technical Institute of the SPA “Physics-Sun” of the Academy of Science of Uzbekistan
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Based on a number of experimental and patented works, the competitive efficiency of a solar cell with non-traditional contact structures is substantiated in detail. It is shown that the efficiency of a solar cell depends on the innovative choice of its contact materials (nano-sized crystalline lead chalcogenide and structureless non-crystalline silicon). The specific electro physical properties of lead chalcogenide and silicon are considered, providing a significant improvement in the converting properties of the solar cell. A specific mechanism for the formation of a contact field due to the participation of current carriers from localized defect energy states of the silicon band gap is presented. By solving the Poisson equation, the parameters of the contact field of the Si:PbX – nano-heterojunction were calculated.

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