Ion sputtering as methods for generation of cluster particles
Ш. Т. ХожиевArifov Institute of ion plasma and laser technologies, Academy of Sciences of the Republic of Uzbekistan, 100125, Durmon Yuli Str. 33, Tashkent, Uzbekistan;С. Е. МаксимовArifov Institute of ion plasma and laser technologies, Academy of Sciences of the Republic of Uzbekistan, 100125, Durmon Yuli Str. 33, Tashkent, Uzbekistan;Ш.К. КучкановArifov Institute of ion plasma and laser technologies, Academy of Sciences of the Republic of Uzbekistan, 100125, Durmon Yuli Str. 33, Tashkent, Uzbekistan;B.B. GaibnazarovTashkent State Technical University named after Islam Karimov, 100095, Tashkent, University St. 2A UzbekistanI. A. YuldoshevTashkent State Technical University named after Islam Karimov, 100095, Tashkent, University St. 2A UzbekistanИ.О. КосимовInstitute of bioorganic chemistry named after O.S. Sodikov, Academy of Sciences of the Republic of Uzbekistan, 100125, M.Ulugbek Str. 83, Tashkent, Uzbekistan;Shakhnoza MenglievaTashkent Pharmaceutical Institute, 100015, Oybek street, 45, Tashkent, Uzbekistan
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The investigations of emission and fragmentation of silicon oxide clusters sputtered from Si surface have been performed. It has been shown that the processes of formation of these clusters can be qualitatively described within the framework of modern concepts, and the main channels of their formation are determined in accordance with the mechanism of combinatorial synthesis.
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