High photoconductivity of silicon with nanoclusters of manganese atoms to create efficient solar cells

The paper investigates the features of the photoconductivity of silicon with multiply charged nanoclusters of manganese atoms. It is shown that in such samples anomalously high impurity photoconductivity is observed in the spectral region λ = 1.8 - 3 µm. It was also shown that such samples have a giant residual photoconductivity. This material p-Si <B, Mn> with nanoclusters of manganese atoms is a very promising material not only for the development of fundamentally new photovoltaic devices, but also for the creation of efficient solar cells operating in the infrared region.

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