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13 ta ish

Ish: Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

  1. Physics of Semiconductor Devices

    Samarth Jain, S. Radhakrishna

    Maqola198715 iqtibos
    ABI

  2. Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors

    Y. Iye, A. Oiwa, Akira Endo +5

    Maqola19994 iqtibos
    ABI

  3. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

    A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

    MaqolaZnO doping and propertiesSemiconductors20213 iqtibos
    ABI

  4. Magnetic anisotropy investigations of (Ga,Mn)As with a large epitaxial strain

    Piotr Juszyński, Marta Gryglas-Borysiewicz, Jacek Szczytko +4

    Maqola20153 iqtibos
    ABI

  5. Uniaxial in-plane magnetic anisotropy of Ga1−xMnxAs

    U. Welp, V. K. Vlasko‐Vlasov, Andreas Menzel +4

    Maqola20043 iqtibos
    ABI

  6. Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor

    Jihoon Chang, Seonghoon Choi, Kyung Jae Lee +7

    Maqola20192 iqtibos
    ABI

  7. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  8. Temperature-induced transition of magnetic anisotropy between in-plane and out-of-plane directions in GaMnAs film

    Sangyeop Lee, Sangyeop Lee, Seonghoon Choi +7

    Maqola20162 iqtibos
    ABI

  9. Anisotropy of magnetoresistance in Be Co-doped GaMnAs

    P. B. Parchinskiy, Fucheng Yu, P. Sekar +1

    MaqolaZnO doping and propertiesJournal of Magnetism and Magnetic Materials20081 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI