ELECTROPHYSICAL PROPERTIES OF NANOFILMS
K.T. DovranovKarshi State University. Karshi 180100. UzbekistanM.T. ormuradovKarshi State University. Karshi 180100. UzbekistanA.A. UlashovKarshi State University. Karshi 180100. UzbekistanI. DoniyorovaKarshi State University. Karshi 180100. Uzbekistan
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Manganese silica thin films of different thicknesses were obtained in a magnetron device under high vacuum conditions. The surface resistance, surface concentration and Hall coefficients of nanosized manganese silicide films obtained by the ion-plasma method were measured on an HMS 5000 device. The Hall coefficient for a 102.3 nm thick film of manganese silicide grown on a silicon surface by the ion-plasma method is 2,8979·10<sup>-5</sup> sm<sup>3</sup>/C.
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